| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXFH10N100 | 1000V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 232 K |
| IXFH10N100 | 1000V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 232 K |
| IXFM10N100 | 1000V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 232 K |
| MTP10N10E | TMOS IV power field effect transistor | Motorola | - | 4 | -65°C | 150°C | 237 K |
| MTP10N10EL | Logic level TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 221 K |
| MTV10N100E | TMOS E-FET power field effect transistor D3PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 269 K |
| MTW10N100E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 192 K |
| MTY10N100E | TMOS E-FET power field effect transistor | Motorola | - | 3 | -55°C | 150°C | 228 K |
| OM10N100NK | N-channel size 6 MOSFET, high energy capability | distributor | - | 2 | -55°C | 125°C | 29 K |
| PHD10N10E | PowerMOS transistor | Philips-Semiconductors | SOT428 | - | - | - | 76 K |
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