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10N12

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FM27C010N120 1M-Bit (128K x 8) High Performance CMOS EPROMFairchild-SemiconductorMDIP32--109 K
HGT1S10N120BNS35A, 1200V, NPT Series N-Channel IGBTFairchild-Semiconductor----217 K
HGT1S10N120BNS35A, 1200V, NPT Series N-Channel IGBTIntersil-Corporation----81 K
HGTG10N120BN35A, 1200V, NPT Series N-Channel IGBTIntersil-Corporation----81 K
HGTG10N120BND35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeFairchild-Semiconductor----110 K
HGTG10N120BND35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeIntersil-Corporation----82 K
HGTP10N120BN35A, 1200V, NPT Series N-Channel IGBTIntersil-Corporation----81 K
MHPM6B10N120SSHybrid power moduleMotorolaISSUE A17-40°C150°C265 K
NM27C010N120 1 Meg (128K x 8) High Perfomance CMOS EPROMFairchild-SemiconductorMDIP32--117 K
RFM10N1210.0A, 120V and 150V, 0.300 ohm, N-Channel Power MOSFET FN1445.2Intersil-Corporation----40 K
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