Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | distributor | TO247 | 3 | -55°C | 150°C | 227 K |
NM27C010N200 | 1 Meg (128K x 8) High Perfomance CMOS EPROM | Fairchild-Semiconductor | MDIP | 32 | - | - | 117 K |
R1110N201ATL | Low noise 150mA L.D.O. regulator. Output voltage 2.0V. "L" active type. Taping specification TL | distributor | - | 5 | -40°C | 85°C | 177 K |
R1110N201ATR | Low noise 150mA L.D.O. regulator. Output voltage 2.0V. "L" active type. Standard taping specification TR. | distributor | - | 5 | -40°C | 85°C | 177 K |
R1110N201ATR | Low noise 150mA L.D.O. regulator. Output voltage 2.0V. "L" active type. Standard taping specification TR. | distributor | - | 5 | -40°C | 85°C | 177 K |
R1110N201BTR | Low noise 150mA L.D.O. regulator. Output voltage 2.0V. "H" active type. Standard taping specification TR. | distributor | - | 5 | -40°C | 85°C | 177 K |
ZXT10N20DE6TA | 20 V NPN silicon low saturation switching transistor | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 230 K |
ZXT10N20DE6TA | 20 V NPN silicon low saturation switching transistor | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 230 K |
ZXT10N20DE6TC | 20 V NPN silicon low saturation switching transistor | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 230 K |
ZXT10N20DE6TC | 20 V NPN silicon low saturation switching transistor | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 230 K |
1 [2] [3] |
---|