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10N4

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HGTD10N40F110A, 400V and 500V N-Channel IGBTsIntersil-Corporation----33 K
HGTD10N40F1S10A, 400V and 500V N-Channel IGBTsIntersil-Corporation----33 K
HGTP10N40C110A, 12A, 400V and 500V N-Channel IGBTsIntersil-Corporation----38 K
HGTP10N40C1D10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast DiodesIntersil-Corporation----37 K
HGTP10N40E110A, 12A, 400V and 500V N-Channel IGBTsIntersil-Corporation----38 K
HGTP10N40E110A, 12A, 400V and 500V N-Channel IGBTsIntersil-Corporation----38 K
HGTP10N40E1D10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast DiodesIntersil-Corporation----37 K
HGTP10N40F1D10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast DiodesIntersil-Corporation----34 K
RFH10N4510.0A, 450V and 500V, 0.600 ohm, N-Channel Power MOSFET FN1629.2Intersil-Corporation----32 K
RFM10N4510.0A, 450V and 500V, 0.600 ohm, N-Channel Power MOSFETIntersil-Corporation----31 K
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