Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HGTD10N40F1 | 10A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 33 K |
HGTD10N40F1S | 10A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 33 K |
HGTP10N40C1 | 10A, 12A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 38 K |
HGTP10N40C1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | Intersil-Corporation | - | - | - | - | 37 K |
HGTP10N40E1 | 10A, 12A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 38 K |
HGTP10N40E1 | 10A, 12A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 38 K |
HGTP10N40E1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | Intersil-Corporation | - | - | - | - | 37 K |
HGTP10N40F1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | Intersil-Corporation | - | - | - | - | 34 K |
MTP10N40E | TMOS E-FET high energy power FET | Motorola | - | 4 | -65°C | 150°C | 249 K |
MTP10N40E | TMOS E-FET high energy power FET | Motorola | - | 4 | -65°C | 150°C | 249 K |
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