Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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INA110SG | Fast-Settling FET-Input Very High Accuracy Instrumentation Amp | Burr-Brown-Corporation | 16 | - | -40°C | 85°C | 148 K |
NE3210S01 | N-channel HJ-FET | NEC-Electronics-Inc- | - | - | - | - | 62 K |
NE3210S01-T1 | N-channel HJ-FET | NEC-Electronics-Inc- | - | - | - | - | 62 K |
NE3210S01-T1B | N-channel HJ-FET | NEC-Electronics-Inc- | - | - | - | - | 62 K |
NE4210S01-T1 | GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification | NEC-Electronics-Inc- | - | - | - | - | 65 K |
NE4210S01-T1B | GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification | NEC-Electronics-Inc- | - | - | - | - | 65 K |
VFC110SG | High Frequency Voltage-to-Frequency Converter | Burr-Brown-Corporation | 14 | - | -25°C | 85°C | 98 K |
X22C10SI | 256 bit (64 x 8) nonvolatile static RAM | distributor | SOIC16 | 16 | -40°C | 85°C | 60 K |
X22C10SM | 256 bit (64 x 8) nonvolatile static RAM | distributor | SOIC16 | 16 | -55°C | 125°C | 60 K |
X22C10SMB | 256 bit (64 x 8) nonvolatile static RAM | distributor | SOIC16 | 16 | - | - | 60 K |
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