Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
NE3210S01 | N-channel HJ-FET | NEC-Electronics-Inc- | - | - | - | - | 62 K |
NE3210S01-T1 | N-channel HJ-FET | NEC-Electronics-Inc- | - | - | - | - | 62 K |
NE3210S01-T1B | N-channel HJ-FET | NEC-Electronics-Inc- | - | - | - | - | 62 K |
NE4210S01-T1 | GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification | NEC-Electronics-Inc- | - | - | - | - | 65 K |
NE4210S01-T1B | GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification | NEC-Electronics-Inc- | - | - | - | - | 65 K |
RC10S01 | Silicon silastic cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 10 A. | distributor | - | - | -50°C | 150°C | 14 K |
RC10S01G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 10 A. | distributor | - | - | -50°C | 150°C | 14 K |
1 |
---|