| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | distributor | TO3 | 3 | -55°C | 150°C | 227 K |
| EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | distributor | TO3P | 3 | -55°C | 150°C | 227 K |
| FQB10N20 | 200V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 794 K |
| FQB10N20L | 200V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 574 K |
| FQD10N20 | 200V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 787 K |
| FQD10N20L | 200V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 576 K |
| FQI10N20L | 200V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 574 K |
| FQP10N20 | 200V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 774 K |
| FQP10N20L | 200V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 627 K |
| FQP10N20L | 200V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 627 K |
| FQP10N20L | 200V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 627 K |
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