| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| D10SD6M | Dual Schottky barrier rectifier | Shindengen-Electric-Manufacturing-Company-Ltd- | - | - | - | - | 694 K |
| IRG4BC10SD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | International-Rectifier | - | 3 | -55°C | 150°C | 210 K |
| IRG4BC10SD-L | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | International-Rectifier | - | 3 | -55°C | 150°C | 217 K |
| IRG4BC10SD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 217 K |
| IRG4RC10SD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | International-Rectifier | - | 3 | -55°C | 150°C | 189 K |
| IRG4RC10SD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | International-Rectifier | - | 3 | -55°C | 150°C | 189 K |
| IRG4RC10SD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | International-Rectifier | - | 3 | -55°C | 150°C | 189 K |
| MC74LCX810SD | Low-voltage CMOS quad 2-input XNOR gate | Motorola | - | 14 | -40°C | 85°C | 116 K |
| TMS4256-10SDE | 262144-bit dynamic random-access memory, 100ns | Texas-Instruments | SD | 16 | -40°C | 85°C | 1 M |
| TMS4257-10SDL | 262144-bit dynamic random-access memory, 100ns | Texas-Instruments | SD | 16 | 0°C | 70°C | 1 M |
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