| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FST81100SM | 80A, 100V ultra fast recovery rectifier | distributor | - | - | - | - | 674 K |
| LC371100SM-10LV | 1MEG (131072words x 8bit) mask ROM internal clocked silicon gate | SANYO-Electric-Co--Ltd- | SOP32 | 32 | 0°C | 70°C | 80 K |
| LC371100SM-20LV | 1MEG (131072words x 8bit) mask ROM internal clocked silicon gate | SANYO-Electric-Co--Ltd- | SOP32 | 32 | 0°C | 70°C | 80 K |
| LC371100SP-10LV | 1MEG (131072words x 8bit) mask ROM internal clocked silicon gate | SANYO-Electric-Co--Ltd- | DIP32 | 32 | 0°C | 70°C | 80 K |
| LC371100SP-20LV | 1MEG (131072words x 8bit) mask ROM internal clocked silicon gate | SANYO-Electric-Co--Ltd- | DIP32 | 32 | 0°C | 70°C | 80 K |
| LC371100ST-10LV | 1MEG (131072words x 8bit) mask ROM internal clocked silicon gate | SANYO-Electric-Co--Ltd- | TSOP32 | 32 | 0°C | 70°C | 80 K |
| LC371100ST-20LV | 1MEG (131072words x 8bit) mask ROM internal clocked silicon gate | SANYO-Electric-Co--Ltd- | TSOP32 | 32 | 0°C | 70°C | 80 K |
| MBR1100S | 100 V, Schottky die | distributor | - | - | -65°C | 125°C | 10 M |
| SB1100S | Schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 0.375inches lead length at Ta = 75degC 1.0 A. | distributor | - | 2 | -50°C | 125°C | 46 K |
| SB1100S | 100 V, 1 A, schottky barrier rectifier | distributor | - | 2 | -50°C | 125°C | 145 K |
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