| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1108 | 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 41 K |
| KS88C01108 | 8-bit single-chip CMOS microcontroller. | Samsung-Electronic | - | 24 | -40°C | 85°C | 117 K |
| MAX1108CUB | Single-supply, low-power, 2-channel, serial 8-bit ADC | Maxim-Integrated-Producs | microMAX | 10 | 0°C | 70°C | 185 K |
| MAX1108EUB | Single-supply, low-power, 2-channel, serial 8-bit ADC | Maxim-Integrated-Producs | microMAX | 10 | -40°C | 85°C | 185 K |
| MAX1108EUB | Single-supply, low-power, 2-channel, serial 8-bit ADC | Maxim-Integrated-Producs | microMAX | 10 | -40°C | 85°C | 185 K |
| SMD1108F | 8-channel auto-monitor ADC in system programmable analog (ISPA) device | distributor | TQFP | 48 | -55°C | 125°C | 717 K |
| TC1108-2.5VDBTR | 300mA CMOS LDO for battery operated systems etc, output voltages 2.5V | Microchip-Technology-Inc- | - | 3 | -40°C | 125°C | 430 K |
| TC1108-3.0VDBTR | 300mA CMOS LDO for battery operated systems etc, output voltages 3.0V | Microchip-Technology-Inc- | - | 3 | -40°C | 125°C | 430 K |
| TC1108-3.3VDBTR | 300mA CMOS LDO for battery operated systems etc, output voltages 3.3V | Microchip-Technology-Inc- | - | 3 | -40°C | 125°C | 430 K |
| TC1108-5.0VDBTR | 300mA CMOS LDO for battery operated systems etc, output voltages 5.0V | Microchip-Technology-Inc- | - | 3 | -40°C | 125°C | 430 K |
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