| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HFA1113 | 850MHz, Low Distortion, Output Limiting, Programmable Gain, Buffer Amplifier | Intersil-Corporation | - | - | - | - | 252 K |
| HFA1113/883 | Output Limiting, Ultra High Speed Programmable Gain, Buffer Amplifier | Intersil-Corporation | - | - | - | - | 218 K |
| LT1113 | Dual Low Noise, Precision, JFET Input Op Amps | Linear-Technology | - | - | - | - | 244 K |
| MN61113 | 2K-Bit EEPROM | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 45 K |
| MN61113S | 2K-Bit EEPROM | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 45 K |
| QRB1113 | Reflective Object Sensor. Phototransistor | distributor | - | - | - | - | 146 K |
| QRC1113 | Reflective Object Sensor. Phototransistor | distributor | - | - | - | - | 143 K |
| UNR1113 | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 181 K |
| XN01113 | Silicon PNP epitaxial planer transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 33 K |
| XP01113 | Silicon PNP epitaxial planer transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 33 K |
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