Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N1119R | 12A silicon power rectifier, 50V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 138 K |
1N1119R | 12A silicon power rectifier, 50V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 138 K |
1N1119RB | 12A silicon power rectifier, 50V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 138 K |
2SB1119 | PNP epitaxial planar silicon transistor, LF amp, electronic governor application | SANYO-Electric-Co--Ltd- | 2038 | 3 | - | - | 85 K |
2SD1119 | Silicon NPN epitaxial planer type small signal transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 38 K |
HFBR-1119T | Fiber optic transmitter and receiver data links for 266MBd | distributor | - | 16 | 0°C | 70°C | 284 K |
SX1119 | RF head with SF1119/SF1120 duplexers | Watkins-Johnson-WJ-Company | DIP | 8 | -40°C | 70°C | 205 K |
UNR1119 | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 181 K |
XN01119 | Silicon PNP epitaxial planer transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 33 K |
XP01119 | Silicon PNP epitaxial planer transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 33 K |
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