| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SB1131 | PNP epitaxial planar silicon transistor, strobe, high-current switching application | SANYO-Electric-Co--Ltd- | 2006A | 3 | - | - | 84 K |
| ISO113B | Low-Cost, High Voltage, Internally Powered Output Isolation Amp | Burr-Brown-Corporation | 24 | - | - | - | 104 K |
| SLD1132VS | 635nm Red Laser Diode | Sony-Semiconductor | - | - | - | - | 86 K |
| SLD1132VS | 635nm Red Laser Diode | Sony-Semiconductor | - | - | - | - | 86 K |
| SLD1133VL | 650nm Index-Guided Red Laser Diode | Sony-Semiconductor | - | - | - | - | 113 K |
| SLD1133VL-53 | 650nm Index-Guided Red Laser Diode | Sony-Semiconductor | - | - | - | - | 91 K |
| SLD1133VS | 650nm Index-Guided Red Laser Diode | Sony-Semiconductor | - | - | - | - | 91 K |
| SLD1134VL | 650nm Pulsation Red Laser Diode | Sony-Semiconductor | - | - | - | - | 260 K |
| SLD1135VS | 650nm Index-Guided Red Laser Diode | Sony-Semiconductor | - | - | - | - | 60 K |
| SLD1137VS | 650nm Index-Guided Red Laser Diode | Sony-Semiconductor | - | - | - | - | 67 K |
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