Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AT-113TR | Frequency 0.5-2 GHz, 40dB,3V voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | - | 8 | -40°C | 85°C | 50 K |
DTA113TKA | Digital PNP transistor (with resistors) | ROHM | SMT3 | 3 | - | - | 44 K |
HUF76113T3ST | 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | Intersil-Corporation | - | - | - | - | 175 K |
MUN2113T1 | 50 V, bias resistor transistor | distributor | - | 3 | -55°C | 150°C | 160 K |
MUN2113T1 | PNP silicon bias resistor transistor | Motorola | - | 3 | -65°C | 150°C | 236 K |
MUN2113T1 | Bias Resistor Transistor PNP | ON-Semiconductor | - | 3 | - | - | 236 K |
MUN5113T1 | PNP silicon bias resistor transistor | Motorola | - | 6 | -65°C | 150°C | 238 K |
MUN5113T1 | Bias Resistor Transistor PNP | ON-Semiconductor | - | 3 | - | - | 238 K |
MUN5113T3 | Bias Resistor Transistor PNP | ON-Semiconductor | - | 3 | - | - | 238 K |
TEA1113T/C1 | Low voltage versatile telephone transmission circuit with dialler interface | Philips-Semiconductors | SOT109 | - | - | - | 181 K |
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