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| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|---|---|---|---|---|---|---|
| 2SK1161 | Power switching MOSFET | distributor | - | - | - | - | 34 K |
| HYB3116160BSJ-50 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 258 K |
| HYB3116160BSJ-60 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 258 K |
| HYB5116160BSJ-50 | 1M x 16-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 272 K |
| HYB5116160BSJ-60 | 1M x 16-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 272 K |
| HYB5116160BSJ-70 | 1M x 16-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 272 K |
| HYB5116165BJ-50 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 269 K |
| HYB5116165BJ-60 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 269 K |
| HYB5116165BJ-70 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 269 K |
| LT1161 | Quad Protected High-Side MOSFET Driver | Linear-Technology | - | - | - | - | 290 K |
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