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116t

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
50S116T-5High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mAdistributorTSOP500°C70°C1 M
50S116T-6High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mAdistributorTSOP500°C70°C1 M
HFBR-1116TFiber optic transmitter and receiver data links for 155 MBddistributorDIP16160°C70°C282 K
HFBR-2116TFiber optic transmitter and receiver data links for 155 MBddistributorDIP16160°C70°C282 K
MUN2116T1PNP silicon bias resistor transistorMotorola-3-65°C150°C236 K
MUN2116T1Bias Resistor Transistor PNPON-Semiconductor-3--236 K
MUN2116T1Bias Resistor Transistor PNPON-Semiconductor-3--236 K
MUN5116T1PNP silicon bias resistor transistorMotorola-6-65°C150°C238 K
MUN5116T1Bias Resistor Transistor PNPON-Semiconductor-3--238 K
TLC116TSENSITIVE GATE TRIACSSGS-Thomson-Microelectronics----52 K
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