| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MGP11N60E | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 123 K |
| MGP11N60E | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 120 K |
| MGP11N60ED | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 145 K |
| MK45H11N65 | Very fast CMOS 512 x 9 BiPORT FIFO, 65ns | SGS-Thomson-Microelectronics | PDIP | 28 | 0°C | 70°C | 696 K |
| MK45H11N65 | Very fast CMOS 512 x 9 BiPORT FIFO, 65ns | SGS-Thomson-Microelectronics | PSDIP | 28 | 0°C | 70°C | 696 K |
| OM11N60SA | 600V, 11 Amp, N-channel MOSFET | distributor | - | 3 | -55°C | 150°C | 29 K |
| R3111N601A-TR | Low voltage detector. Detector threshold (-Vdet) 6.0V. Output type: Nch open drain. Standard taping specification TR | distributor | - | 5 | -40°C | 85°C | 205 K |
| R3111N601C-TR | Low voltage detector. Detector threshold (-Vdet) 6.0V. Output type: CMOS. Standard taping specification TR | distributor | - | 5 | -40°C | 85°C | 205 K |
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