Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N1200A | Silicon power rectifier | Diotec-Elektronische | - | 2 | -65°C | 175°C | 35 K |
1N1200A | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | - | - | - | - | 131 K |
1N1200A | 12A silicon power rectifier, 100V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 138 K |
1N1200AR | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | - | - | - | - | 131 K |
1N1200AR | 12A silicon power rectifier, 100V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 138 K |
EFA1200A | 8-12V low distortion GaAs power FET | distributor | - | - | - | - | 33 K |
EPA1200A | 8-12V high efficiency heterojunction power FET | distributor | - | - | - | - | 31 K |
MAX1200ACMH | +5V single-supply, 1Msps, 16-bit self-calibrating ADC | Maxim-Integrated-Producs | MQFP | 44 | 0°C | 70°C | 204 K |
MAX1200AEMH | +5V single-supply, 1Msps, 16-bit self-calibrating ADC | Maxim-Integrated-Producs | MQFP | 44 | -40°C | 85°C | 204 K |
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