Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N1200C | 25A silicon power rectifier, 100V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 128 K |
1N1200C | 25A silicon power rectifier, 100V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 128 K |
KM416C1200CJ-5 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 767 K |
KM416C1200CJ-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 767 K |
KM416C1200CJL-5 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 767 K |
KM416C1200CJL-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 767 K |
KM416V1200CJ-5 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 767 K |
KM416V1200CJ-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 767 K |
KM416V1200CJL-5 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 767 K |
KM416V1200CJL-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 767 K |
KM416V1200CT-5 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 767 K |
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