| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BSM15GD120D2 | 1200V/25A IGBT power module | Infineon-formely-Siemens | SIXPACK1 | 17 | - | - | 138 K |
| BSM25GAL120DN2 | 1200V/38A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 62 K |
| BSM25GB120DN2 | 1200V/38A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 111 K |
| BSM25GD120D2 | 1200V/35A IGBT power module | Infineon-formely-Siemens | SIXPACK1 | 17 | - | - | 137 K |
| BSM35GB120DN2 | 1200V/50A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 110 K |
| MGW12N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 168 K |
| MGY20N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 171 K |
| MGY25N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 171 K |
| TPS1120D | DUAL P-CHANNEL ENHANCEMENENT-MODE MOSFET | Texas-Instruments | D | 8 | - | - | 180 K |
| TPS1120DR | DUAL P-CHANNEL ENHANCEMENENT-MODE MOSFET | Texas-Instruments | D | 8 | - | - | 180 K |
| 1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
|---|
