| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SB1285 | Low-speed switching Darlington transistor | Shindengen-Electric-Manufacturing-Company-Ltd- | - | - | - | - | 415 K |
| 2SK1285 | N channel power MOS FET | NEC-Electronics-Inc- | - | - | - | - | 377 K |
| AMT128502AT46F | 125 Gb/s integrated 850 nm MSM-TIA | Anadigics-Inc- | - | 4 | -65°C | 125°C | 369 K |
| AMT128503AT46F | 125 Gb/s integrated 850 nm MSM-TIA | Anadigics-Inc- | - | 4 | -65°C | 125°C | 634 K |
| AMT128503AT46L | 125 Gb/s integrated 850 nm MSM-TIA | Anadigics-Inc- | - | 4 | -65°C | 125°C | 634 K |
| AMT128503AT56F | 125 Gb/s integrated 850 nm MSM-TIA | Anadigics-Inc- | - | 4 | -65°C | 125°C | 634 K |
| LTC1285 | 3V Micropower Sampling 12-Bit A/D Converters in SO-8 Packages | Linear-Technology | - | - | - | - | 412 K |
| MM1285XV | Hybrid driver | distributor | - | 16 | -10°C | 50°C | 69 K |
| SD1285 | HF SSB APPLICATIONS RF & MICROWAVE TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 47 K |
| VTE1285 | GaAlAs infrared emitting diode. Irradiance(typ) 5.5 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 27 K |
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