| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTP12N10E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 170°C | 239 K |
| PHD12N10E | PowerMOS transistor | Philips-Semiconductors | SOT428 | - | - | - | 79 K |
| PHP12N10E | 100 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 57 K |
| PHP12N10E | PowerMOS transistor | Philips-Semiconductors | SOT78 | - | - | - | 72 K |
| PNP12N10E | PowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 14 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 72 K |
| PNP12N10E | PowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 14 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 72 K |
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