| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| RFD12N06RLE | 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs | Intersil-Corporation | - | - | - | - | 49 K |
| RFD12N06RLESM | 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs | Intersil-Corporation | - | - | - | - | 49 K |
| RFM12N08 | 12.0A, 80V and 100V, 0.200 ohm, N-Channel Power MOSFET FN1386.2 | Intersil-Corporation | - | - | - | - | 43 K |
| RFP12N08 | 12.0A, 80V and 100V, 0.200 ohm, N-Channel Power MOSFET FN1386.2 | Intersil-Corporation | - | - | - | - | 43 K |
| STD12N05 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 177 K |
| STD12N05L | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 176 K |
| STD12N06 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 177 K |
| STD12N06L | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 176 K |
| STK12N05L | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 180 K |
| STK12N06L | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 180 K |
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