Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MGW12N120 | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 136 K |
MGW12N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 168 K |
PHD12N10E | PowerMOS transistor | Philips-Semiconductors | SOT428 | - | - | - | 79 K |
PHP12N10E | PowerMOS transistor | Philips-Semiconductors | SOT78 | - | - | - | 72 K |
RFM12N10 | 12.0A, 80V and 100V, 0.200 ohm, N-Channel Power MOSFET FN1386.2 | Intersil-Corporation | - | - | - | - | 43 K |
RFM12N18 | 12.0A, 180V and 200V, 0.250 ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 35 K |
RFP12N10 | 12.0A, 80V and 100V, 0.200 ohm, N-Channel Power MOSFET FN1386.2 | Intersil-Corporation | - | - | - | - | 43 K |
RFP12N10L | 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 38 K |
RFP12N18 | 12.0A, 180V and 200V, 0.250 ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 35 K |
STD12N10L | N-CHANNEL 100V - 0.12 OHM - 12A TO-252 LOW THRESHOLD POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 45 K |
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