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12n1

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MGW12N120Insulated Gate Bipolar Transistor N-ChannelON-Semiconductor-3--136 K
MGW12N120DInsulated Gate Bipolar Transistor with Anti-Parallel Diode N-ChannelON-Semiconductor-3--168 K
PHD12N10EPowerMOS transistorPhilips-SemiconductorsSOT428---79 K
PHP12N10EPowerMOS transistorPhilips-SemiconductorsSOT78---72 K
RFM12N1012.0A, 80V and 100V, 0.200 ohm, N-Channel Power MOSFET FN1386.2Intersil-Corporation----43 K
RFM12N1812.0A, 180V and 200V, 0.250 ohm, N-Channel Power MOSFETIntersil-Corporation----35 K
RFP12N1012.0A, 80V and 100V, 0.200 ohm, N-Channel Power MOSFET FN1386.2Intersil-Corporation----43 K
RFP12N10L12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFETIntersil-Corporation----38 K
RFP12N1812.0A, 180V and 200V, 0.250 ohm, N-Channel Power MOSFETIntersil-Corporation----35 K
STD12N10LN-CHANNEL 100V - 0.12 OHM - 12A TO-252 LOW THRESHOLD POWER MOS TRANSISTORSGS-Thomson-Microelectronics----45 K
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