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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M27C256B-12N1256 Kbit (32Kb x 8) EPROM, 5V, 120nsSGS-Thomson-MicroelectronicsTSOP280°C70°C107 K
M27C256B-12N1TR256 Kbit (32Kb x 8) EPROM, 5V, 120nsSGS-Thomson-MicroelectronicsTSOP280°C70°C107 K
M27C4001-12N1TR4 Mbit (512Kb x 8) EPROM, 120nsSGS-Thomson-MicroelectronicsTSOP320°C70°C113 K
M27C4001-12N1X4 Mbit (512Kb x 8) EPROM, 120nsSGS-Thomson-MicroelectronicsTSOP320°C70°C113 K
M27C512-12N1512 Kbit (64Kb x 8) EPROM, 5V, 120nsSGS-Thomson-MicroelectronicsTSOP280°C70°C114 K
M27C512-12N1TR512 Kbit (64Kb x 8) EPROM, 5V, 120nsSGS-Thomson-MicroelectronicsTSOP280°C70°C114 K
MK45H12N12Very fast CMOS 1K x 9 BiPORT FIFO, 120nsSGS-Thomson-MicroelectronicsPDIP280°C70°C696 K
MK45H12N12Very fast CMOS 1K x 9 BiPORT FIFO, 120nsSGS-Thomson-MicroelectronicsPSDIP280°C70°C696 K
PNP12N10EPowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 14 A.Philips-SemiconductorsTO220AB30°C175°C72 K
PNP12N10EPowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 14 A.Philips-SemiconductorsTO220AB30°C175°C72 K
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