| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BTS612N1 | Smart 2-channel highside power switch | Infineon-formely-Siemens | - | 7 | -40°C | 150°C | 183 K |
| BTS712N1 | Smart 4-channel highside power switch | Infineon-formely-Siemens | - | 20 | -40°C | 150°C | 183 K |
| FM27C512N120 | 512K-Bit (64K x 8) High Performance CMOS EPROM | Fairchild-Semiconductor | MDIP | 28 | - | - | 100 K |
| FM27C512N150 | 512K-Bit (64K x 8) High Performance CMOS EPROM | Fairchild-Semiconductor | MDIP | 28 | - | - | 100 K |
| MGV12N120D | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 79 K |
| MGW12N120 | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 228 K |
| MGW12N120D | Insulated gate bipolar transistor with anti-parallel diode | Motorola | - | 3 | -55°C | 150°C | 250 K |
| MTP12N10E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 170°C | 239 K |
| NM27C512N120 | 524,288-Bit (64K x 8) High Performance CMOS EPROM | Fairchild-Semiconductor | MDIP | 28 | - | - | 105 K |
| NM27C512N150 | 524,288-Bit (64K x 8) High Performance CMOS EPROM | Fairchild-Semiconductor | MDIP | 28 | - | - | 105 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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