Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IXFH12N100 | 1000V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 232 K |
MTP12N10E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 170°C | 239 K |
PHD12N10E | PowerMOS transistor | Philips-Semiconductors | SOT428 | - | - | - | 79 K |
PHP12N10E | PowerMOS transistor | Philips-Semiconductors | SOT78 | - | - | - | 72 K |
R3112N10A-TR | Low voltage detector with output delay. Output voltage 1.0V. Output type Nch open drain. Standard taping type TR. | distributor | - | 5 | -40°C | 85°C | 267 K |
R3112N10C-TR | Low voltage detector with output delay. Output voltage 1.0V. Output type CMOS. Standard taping type TR. | distributor | - | 5 | -40°C | 85°C | 267 K |
RFM12N10 | 12.0A, 80V and 100V, 0.200 ohm, N-Channel Power MOSFET FN1386.2 | Intersil-Corporation | - | - | - | - | 43 K |
RFP12N10 | 12.0A, 80V and 100V, 0.200 ohm, N-Channel Power MOSFET FN1386.2 | Intersil-Corporation | - | - | - | - | 43 K |
RFP12N10L | 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 38 K |
STD12N10L | N-CHANNEL 100V - 0.12 OHM - 12A TO-252 LOW THRESHOLD POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 45 K |
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