| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFB13N50A | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A | International-Rectifier | - | 3 | -55°C | 150°C | 97 K |
| IXFH13N50 | 500V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 82 K |
| IXFJ13N50 | 500V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 68 K |
| IXFM13N50 | 500V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 82 K |
| IXTC13N50 | 500V high MOSFET | distributor | ISOPLUS220 | 3 | -55°C | 150°C | 69 K |
| MK45H13N50 | Very fast CMOS 2K x 9 BiPORT FIFO, 50ns | SGS-Thomson-Microelectronics | PDIP | 28 | 0°C | 70°C | 696 K |
| ZXT13N50DE6TA | 50 V NPN silicon low saturation switching transistor | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 419 K |
| ZXT13N50DE6TA | 50 V NPN silicon low saturation switching transistor | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 419 K |
| ZXT13N50DE6TC | 50 V NPN silicon low saturation switching transistor | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 419 K |
| ZXT13N50DE6TC | 50 V NPN silicon low saturation switching transistor | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 419 K |
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