Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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CM150DY-12H | 150 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 47 K |
CM150DY-12H | 600V, 150A dual IGBT module | distributor | - | - | - | - | 60 K |
CM150DY-12H | 600V, 150A dual IGBT module | distributor | - | - | - | - | 60 K |
CM150DY-24H | 150 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 47 K |
QM150DY-24BK | 150A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 9 | -40°C | 150°C | 83 K |
QM150DY-24K | 150A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 9 | -40°C | 150°C | 83 K |
QM150DY-2HBK | 150A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 9 | -40°C | 150°C | 84 K |
QM150DY-2HK | 150A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 9 | -40°C | 150°C | 82 K |
QM150DY-3H | 150A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 9 | -40°C | 150°C | 78 K |
QM150DY-HBK | 150A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 9 | -40°C | 150°C | 89 K |
QM150DY-HK | 150A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 9 | -40°C | 150°C | 78 K |
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