| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1608 | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 306 K |
| 2SA1608-T1 | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 306 K |
| 2SA1608-T2 | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 306 K |
| FM1608-120-P | 64 Kb bytewide FRAM memory. 120 ns access | distributor | plastic DIP | 28 | -40°C | 85°C | 104 K |
| FM1608-120-S | 64 Kb bytewide FRAM memory. 120 ns access | distributor | SOP | 28 | -40°C | 85°C | 104 K |
| HT1608L | 2x20 channel LCD driver | Holtek-Semiconductor-Inc- | QFP | 64 | -20°C | 70°C | 557 K |
| K4S160822DT-G/F7 | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 143 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 44 | 0°C | 70°C | 1 M |
| K4S160822DT-G/F8 | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 125 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 44 | 0°C | 70°C | 1 M |
| K4S160822DT-G/FH | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 100 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 44 | 0°C | 70°C | 1 M |
| K4S160822DT-G/FL | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 100 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 44 | 0°C | 70°C | 1 M |
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