| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4E160811D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 257 K |
| K4E160811D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | - | 28 | 0°C | 70°C | 257 K |
| K4E160812D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 257 K |
| K4E160812D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | - | 28 | 0°C | 70°C | 257 K |
| K4F160811D-B | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 226 K |
| K4F160811D-F | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | - | 28 | 0°C | 70°C | 226 K |
| K4F160812D-B | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 226 K |
| K4F160812D-F | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | - | 28 | 0°C | 70°C | 226 K |
| K4S160822DT-G/F10 | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 100 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 44 | 0°C | 70°C | 1 M |
| MAX1608EEE | Octal SMBus-to-parallel I/O expander | Maxim-Integrated-Producs | QSOP | 16 | -40°C | 85°C | 291 K |
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