Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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EDI9LC644V1612BC | SSRAM access:166MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM | distributor | - | 153 | - | - | 1 M |
K4E641612B-TL50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
K4E641612B-TL60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
K4E661612B-TL45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
K4E661612B-TL50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
K4E661612B-TL60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
WED9LC6416V1612BC | SSRAM access 200MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | distributor | BGA | 153 | -40°C | 85°C | 370 K |
WED9LC6416V1612BI | SSRAM access 166MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | distributor | BGA | 153 | - | - | 370 K |
WED9LC6816V1612BC | 3.3V power supply; 256K x 32 SSRAM / 4M x 32 SDRAM. External memory solution for Texas instruments TMS320C6000 DSP | distributor | BGA | 153 | -40°C | 85°C | 400 K |
WED9LC6816V1612BI | 3.3V power supply; 256K x 32 SSRAM / 4M x 32 SDRAM. External memory solution for Texas instruments TMS320C6000 DSP | distributor | BGA | 153 | -40°C | 85°C | 400 K |
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