| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GS816218B-133 | 8.5ns 133MHz 1M x 18 18MB S/DCD synchronous burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 956 K |
| GS816218B-133I | 8.5ns 133MHz 1M x 18 18MB S/DCD synchronous burst SRAM | distributor | BGA | 119 | -40°C | 85°C | 956 K |
| GS816218B-150 | 7.5ns 150MHz 1M x 18 18MB S/DCD synchronous burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 956 K |
| GS816218B-166 | 7ns 166MHz 1M x 18 18MB S/DCD synchronous burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 956 K |
| GS816218B-200 | 6.5ns 200MHz 1M x 18 18MB S/DCD synchronous burst SRAM | distributor | BGA | 119 | -40°C | 85°C | 956 K |
| GS816218B-225 | 6ns 225MHz 1M x 18 18MB S/DCD synchronous burst SRAM | distributor | BGA | 119 | -40°C | 85°C | 956 K |
| GS816218B-250 | 5.5ns 250MHz 1M x 18 18MB S/DCD synchronous burst SRAM | distributor | BGA | 119 | -40°C | 85°C | 956 K |
| MJL16218 | NPN bipolar power deflection transistor | Motorola | - | 3 | -55°C | 150°C | 157 K |
| MJL16218 | SCANSWITCH™ | ON-Semiconductor | - | 3 | - | - | 157 K |
| VN16218L2 | 2.5 Gigabit SERDES transceiver | distributor | LQFP | 80 | 0°C | 70°C | 135 K |
| 1 [2] [3] |
|---|
