| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DS1669S-010 | Dallastat Electronic Digital Rheostat | Dallas-Semiconductor | SOIC | 8 | -40°C | 85°C | 151 K |
| DS1669S-010/T&R | Dallastat Electronic Digital Rheostat | Dallas-Semiconductor | SOIC/T&R | 8 | -40°C | 85°C | 151 K |
| DS1669S-050 | Dallastat Electronic Digital Rheostat | Dallas-Semiconductor | SOIC | 8 | -40°C | 85°C | 151 K |
| DS1669S-050/T&R | Dallastat Electronic Digital Rheostat | Dallas-Semiconductor | SOIC/T&R | 8 | -40°C | 85°C | 151 K |
| DS1669S-100 | Dallastat Electronic Digital Rheostat | Dallas-Semiconductor | SOIC | 8 | -40°C | 85°C | 151 K |
| DS1669S-100/T&R | Dallastat Electronic Digital Rheostat | Dallas-Semiconductor | SOIC/T&R | 8 | -40°C | 85°C | 151 K |
| K4R271669AM-CG6 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| K4R271669AN-CG6 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| K4R271669AN-CK7 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| LX1669CD | DC:DC Controller - Programmable | Microsemi-Corporation | SOIC | - | - | - | 337 K |
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