| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1EZ170D5 | 1 watt silicon zener diode. Nominal zener voltage 170V at 1.5mA. | distributor | - | 2 | -65°C | 175°C | 109 K |
| 1EZ170D5 | Pd=1.0W, Vz=170V zener diode | distributor | - | - | - | - | 86 K |
| 3EZ170D | 3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-20% tolerance. | distributor | - | 2 | -65°C | 175°C | 146 K |
| 3EZ170D1 | 3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-1% tolerance. | distributor | - | 2 | -65°C | 175°C | 146 K |
| FGL60N170D | IGBT | Fairchild-Semiconductor | - | - | - | - | 558 K |
| GS8170DW18C-250 | 250MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 906 K |
| GS8170DW18C-250I | 250MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 906 K |
| GS8170DW18C-300 | 300MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 906 K |
| GS8170DW18C-300I | 300MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 906 K |
| GS8170DW18C-333I | 333MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 906 K |
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