| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SD1760 | NPN silicon power transistor | ROHM | - | 3 | - | - | 77 K |
| DF1760P | Multi-Bit Enhanced Noise Shaping 20-Bit A/D Conversion System | Burr-Brown-Corporation | 28 | - | -40°C | 85°C | 201 K |
| DF1760U | Multi-Bit Enhanced Noise Shaping 20-Bit A/D Conversion System | Burr-Brown-Corporation | 28 | - | -40°C | 85°C | 201 K |
| DF1760U/1K | Multi-Bit Enhanced Noise Shaping 20-Bit A/D Conversion System | Burr-Brown-Corporation | 28 | - | -40°C | 85°C | 201 K |
| MLS9228-01760 | CDMA 1720-1800 MHz, Surface mount frequency synthesizer | M-A-COM---manufacturer-of-RF | SMT | 12 | -40°C | 85°C | -- |
| MLS9228-01760TR | CDMA 1720-1800 MHz, Surface mount frequency synthesizer | M-A-COM---manufacturer-of-RF | SMT | 12 | -40°C | 85°C | -- |
| UPA1760G-E1 | N-channel enhancement type power MOS FET(Dual type) | NEC-Electronics-Inc- | - | - | - | - | 68 K |
| UPA1760G-E2 | N-channel enhancement type power MOS FET(Dual type) | NEC-Electronics-Inc- | - | - | - | - | 68 K |
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