| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4R271869B-MCG6 | 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung-Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | 306 K |
| K4R271869B-MCK7 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung-Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | 306 K |
| K4R271869B-MCK8 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | Samsung-Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | 306 K |
| K4R271869B-NCG6 | 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung-Electronic | microBGA(normal CSP) | 54 | 0°C | 100°C | 306 K |
| K4R271869B-NCK7 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung-Electronic | microBGA(normal CSP) | 54 | 0°C | 100°C | 306 K |
| K4R881869M-NCG6 | 512K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung-Electronic | microBGA(normal CSP) | 56 | 0°C | 100°C | 3 M |
| K4R881869M-NCK7 | 512K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung-Electronic | microBGA(normal CSP) | 56 | 0°C | 100°C | 3 M |
| K4R881869M-NCK8 | 512K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | Samsung-Electronic | microBGA(normal CSP) | 56 | 0°C | 100°C | 3 M |
| NTE1869 | Integrated circuit. 3 terminal variable voltage regulator. | distributor | TO92 | 3 | -20°C | 75°C | 24 K |
| NTE1869SM | Integrated circuit. 3 terminal variable voltage regulator. | distributor | - | 3 | -20°C | 75°C | 24 K |
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