| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SJ196/JD | P-channel MOS FET | NEC-Electronics-Inc- | - | - | - | - | 386 K |
| 2SJ196/JD | P-channel MOS FET | NEC-Electronics-Inc- | - | - | - | - | 386 K |
| 2SJ196/JM | P-channel MOS FET | NEC-Electronics-Inc- | - | - | - | - | 386 K |
| 2SK1960 | N Channel enhancement MOS FET | NEC-Electronics-Inc- | 3pin Mini Mold | - | - | - | 60 K |
| 2SK1960-T1 | N Channel enhancement MOS FET | NEC-Electronics-Inc- | 3pin Mini Mold | - | - | - | 60 K |
| 2SK1960-T2 | N Channel enhancement MOS FET | NEC-Electronics-Inc- | 3pin Mini Mold | - | - | - | 60 K |
| BCR196W | PNP silicon digital transistor | Infineon-formely-Siemens | - | 3 | - | - | 34 K |
| BFP196W | NPN silicon RF transistor | Infineon-formely-Siemens | - | 4 | -65°C | 150°C | 60 K |
| BFY196H | HiRel NPN silicon RF transistor | Infineon-formely-Siemens | - | 4 | -65°C | 200°C | 120 K |
| BFY196P | HiRel NPN silicon RF transistor | Infineon-formely-Siemens | - | 4 | -65°C | 200°C | 120 K |
| W196G | Spread Spectrum FTG for 440BX and VIA Apollo Pro-133 | Cypress-Semiconductor | - | - | - | - | 138 K |
| [1] [2] [3] [4] [5] 6 [7] [8] [9] [10] |
|---|
