| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1982 | Small signal silicon PNP transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 37 K |
| 2SA1988 | PNP silicon power transistor | NEC-Electronics-Inc- | - | - | - | - | 47 K |
| 2SC1980 | Silicon NPN epitaxial planer type small signal transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 37 K |
| 2SD1981 | NPN epitaxial planar silicon darlington transistor, driver application | SANYO-Electric-Co--Ltd- | 2006A | 3 | - | - | 70 K |
| 2SJ198-T/JD | P-channel MOS FET | NEC-Electronics-Inc- | - | - | - | - | 343 K |
| 2SJ198-T/JM | P-channel MOS FET | NEC-Electronics-Inc- | - | - | - | - | 343 K |
| 2SJ198/JD | P-channel MOS FET | NEC-Electronics-Inc- | - | - | - | - | 343 K |
| 2SJ198/JM | P-channel MOS FET | NEC-Electronics-Inc- | - | - | - | - | 343 K |
| BCR198S | PNP silicon digital transistor array | Infineon-formely-Siemens | - | 6 | - | - | 43 K |
| BCR198W | PNP silicon digital transistor | Infineon-formely-Siemens | - | 3 | - | - | 34 K |
| [1] [2] [3] 4 [5] [6] [7] [8] [9] [10] |
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