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1E18

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
GS8161E18T-1338.5ns 133MHz 1M x 18 pipelined and flow through synchronous SRAMdistributorTQFP1000°C70°C1 M
GS8161E18T-133I8.5ns 133MHz 1M x 18 pipelined and flow through synchronous SRAMdistributorTQFP100-40°C85°C1 M
GS8161E18T-1507.5ns 150MHz 1M x 18 pipelined and flow through synchronous SRAMdistributorTQFP1000°C70°C1 M
GS8161E18T-150I7.5ns 150MHz 1M x 18 pipelined and flow through synchronous SRAMdistributorTQFP100-40°C85°C1 M
GS8161E18T-1667ns 166MHz 1M x 18 pipelined and flow through synchronous SRAMdistributorTQFP1000°C70°C1 M
GS8161E18T-2006.5ns 200MHz 1M x 18 pipelined and flow through synchronous SRAMdistributorTQFP1000°C70°C1 M
GS8161E18T-2256ns 225MHz 1M x 18 pipelined and flow through synchronous SRAMdistributorTQFP1000°C70°C1 M
GS8161E18T-2505.5ns 250MHz 1M x 18 pipelined and flow through synchronous SRAMdistributorTQFP1000°C70°C1 M
R3111E181A-TZLow voltage detector. Detector threshold (-Vdet) 1.8V. Output type: Nch open drain.distributor-3-40°C85°C205 K
R3111E181C-TZLow voltage detector. Detector threshold (-Vdet) 1.8V. Output type: CMOSdistributor-3-40°C85°C205 K
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