Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
EGL41FTR | Surface mount glass passivated junction fast efficient rectifier, 300V | General-Semiconductor | - | 2 | -65°C | 175°C | 65 K |
TC55V2001FTI-10 | 262,144-word by 8 bit static RAM, access time 100ns | Toshiba | TSOP | 32 | -40°C | 85°C | 562 K |
TC58FVB641FT-10 | 64-Mbit CMOS flash memory, 100ns | Toshiba | TSOP | 48 | -40°C | 85°C | 593 K |
XC68341FT16V | Microprocessor, 3.3V, 0-16,78MHz | Motorola | PQFP | 160 | 0°C | 70°C | 134 K |
ZXMN2A01FTC | 20 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 85 K |
ZXMN2A01FTC | 20 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 85 K |
ZXMN3A01FTA | 30 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 1 M |
ZXMN3A01FTA | 30 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 1 M |
ZXMN3A01FTC | 30 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 1 M |
ZXMN3A01FTC | 30 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 1 M |
ZXMN3A01FTC | 30 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 1 M |
[1] 2 [3] |
---|