| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N3600 | 75 volt switching diode | distributor | - | 2 | -65°C | 175°C | 34 K |
| 1N3600UR | 75 volt switching diode | distributor | - | - | -65°C | 175°C | 33 K |
| JAN1N3671A | 12A silicon power rectifier, 800V | Microsemi-Corporation | DO4 | 2 | -65°C | 150°C | 106 K |
| JAN1N3671RA | 12A silicon power rectifier, 800V | Microsemi-Corporation | DO4 | 2 | -65°C | 150°C | 106 K |
| JAN1N3673A | 12A silicon power rectifier, 1000V | Microsemi-Corporation | DO4 | 2 | -65°C | 150°C | 106 K |
| JAN1N3673RA | 12A silicon power rectifier, 1000V | Microsemi-Corporation | DO4 | 2 | -65°C | 150°C | 106 K |
| JANTX1N3671RA | 12A silicon power rectifier, 800V | Microsemi-Corporation | DO4 | 2 | -65°C | 150°C | 106 K |
| JANTX1N3673A | 12A silicon power rectifier, 1000V | Microsemi-Corporation | DO4 | 2 | -65°C | 150°C | 106 K |
| JANTX1N3673RA | 12A silicon power rectifier, 1000V | Microsemi-Corporation | DO4 | 2 | -65°C | 150°C | 106 K |
| R3131N36EC-TR | Low voltage detector with built-in delay circuit. Detector threshold 3.6V. Standard output delay time 240ms. Output type CMOS. Detection mode H series output. Taping type TR. | distributor | - | 3 | -40°C | 85°C | 273 K |
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