| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5000 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | TOP_HAT | - | - | - | 88 K |
| 1N5001 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | TOP_HAT | - | - | - | 88 K |
| 1N5002 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | TOP_HAT | - | - | - | 88 K |
| 1N5002 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | TOP_HAT | - | - | - | 88 K |
| 1N5003 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | TOP_HAT | - | - | - | 88 K |
| MTD1N50E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 267 K |
| MTP1N50E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 159 K |
| R1111N501A-TR | Low noise 150mA LDO regulator. Output voltage 5.0V. "L" active type. Standard taping specification TR | distributor | - | 5 | -40°C | 85°C | 140 K |
| R1111N501B-TR | Low noise 150mA LDO regulator. Output voltage 5.0V. "H" active type. Standard taping specification TR | distributor | - | 5 | -40°C | 85°C | 140 K |
| UPF1N50 | N Channel MOSFET | Microsemi-Corporation | Powermite_3 | - | - | - | 681 K |
| [1] [2] 3 [4] [5] [6] [7] [8] [9] |
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