| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MGP11N60E | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 123 K |
| MGP11N60E | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 120 K |
| MGP11N60ED | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 145 K |
| MGP21N60E | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 123 K |
| MGW21N60ED | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 152 K |
| MGW21N60ED | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 152 K |
| MTD1N60E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 266 K |
| MTP1N60E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 232 K |
| PHP1N60E | 600 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 21 K |
| PHP1N60E | 600 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 21 K |
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