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1N80E

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MGP21N80EInsulated gate bipolar transistorMotorola-3-55°C150°C127 K
MTD1N80ETMOS E-FET power field effect transistor D2PAK for surface mountMotorolaDPAK4-55°C150°C269 K
MTP1N80ETMOS E-FET power field effect transistorMotorola-4-55°C150°C221 K
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