| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 27C010TRT1S12 | 1 megabit (128K x 8-bit) - OPT EPROM | distributor | Flatpack | 32 | -55°C | 125°C | 207 K |
| HGT1S12N60A4DS | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Fairchild-Semiconductor | - | - | - | - | 173 K |
| HGT1S12N60A4DS | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 394 K |
| HGT1S12N60A4S | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 115 K |
| HGT1S12N60B3DS | 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 117 K |
| HGT1S12N60B3S | 27A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 112 K |
| HGT1S12N60C3DS | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | Intersil-Corporation | - | - | - | - | 99 K |
| HGT1S12N60C3S | 24A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 119 K |
| IDT70T651S12DR | High-speed 2.5V 9Mbit (256K x 36) asynchronous dual-port static RAM with 3.3V or 2.5V interface, 12ns | Integrated-Device-Technology-Inc- | PQFP | 208 | 0°C | 70°C | 344 K |
| IDT70T651S12DRI | High-speed 2.5V 9Mbit (256K x 36) asynchronous dual-port static RAM with 3.3V or 2.5V interface, 12ns | Integrated-Device-Technology-Inc- | PQFP | 208 | -40°C | 85°C | 344 K |
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