Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MLD1N06CL | Voltage clamped current limiting mosfet | Motorola | DPAK | 4 | -65°C | 150°C | 163 K |
PHB11N06LT | 55 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 114 K |
PHB21N06LT | 55 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 114 K |
PHD11N06LT | 55 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 114 K |
PHD21N06LT | 55 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 114 K |
PHP11N06LT | 55 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 114 K |
PHP21N06LT | 55 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 114 K |
PHT11N06LT | 55 V, trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 55 K |
RLP1N06CLE | 1A, 55V, 0.750 Ohm,Voltage Clamping, Current Limited, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 47 K |
STP21N06LFI | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 197 K |
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