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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MLD1N06CLVoltage clamped current limiting mosfetMotorolaDPAK4-65°C150°C163 K
PHB11N06LT55 V, N-channel trenchMOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C114 K
PHB21N06LT55 V, N-channel trenchMOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C114 K
PHD11N06LT55 V, N-channel trenchMOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C114 K
PHD21N06LT55 V, N-channel trenchMOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C114 K
PHP11N06LT55 V, N-channel trenchMOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C114 K
PHP21N06LT55 V, N-channel trenchMOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C114 K
PHT11N06LT55 V, trenchMOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C150°C55 K
RLP1N06CLE1A, 55V, 0.750 Ohm,Voltage Clamping, Current Limited, N-Channel Power MOSFETIntersil-Corporation----47 K
STP21N06LFIN-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----197 K
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