| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N100A | Germanium Diode | Microsemi-Corporation | - | - | - | - | 62 K |
| MMFT1N10E | Medium power field effect transistor | Motorola | - | 4 | -65°C | 150°C | 236 K |
| MSAFA1N100D | N Channel MOSFET | Microsemi-Corporation | DIE | - | - | - | 78 K |
| MSAFA1N100P3 | N Channel MOSFET | Microsemi-Corporation | Powermite_3 | - | - | - | 44 K |
| MTB1N100E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 256 K |
| MTP1N100E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 203 K |
| R3111N101A-TR | Low voltage detector. Detector threshold (-Vdet) 1.0V. Output type: Nch open drain. Standard taping specification TR | distributor | - | 5 | -40°C | 85°C | 205 K |
| RFL1N10 | 1.0A, 80V and 100V, 1.200 ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 30 K |
| RFL1N10L | 1.0A, 80V and 100V, 1.200 ohm, Logic Level, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 29 K |
| UPF1N100 | N Channel MOSFET | Microsemi-Corporation | Powermite_3 | - | - | - | 58 K |
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