Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N100A | Germanium Diode | Microsemi-Corporation | - | - | - | - | 62 K |
IXTK21N100 | 600V high voltage megaMOS FET | distributor | - | 3 | -55°C | 150°C | 137 K |
MSAFA1N100D | N Channel MOSFET | Microsemi-Corporation | DIE | - | - | - | 78 K |
MSAFA1N100P3 | N Channel MOSFET | Microsemi-Corporation | Powermite_3 | - | - | - | 44 K |
MTB1N100E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 256 K |
MTP1N100E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 203 K |
OM1N100SA | 1000V; up to 6 Amp, N-channel MOSFET | distributor | - | 4 | -55°C | 150°C | 40 K |
OM1N100ST | 1000V; up to 6 Amp, N-channel MOSFET | distributor | - | 4 | -55°C | 150°C | 40 K |
RL1N1000F | Photoflash rectifier. Max recurrent peak reverse voltage 1000V, max RMS voltage 700V, max DC blocking voltage 1000V. Max average forward current 0.5A at Ta=55degC. | distributor | - | 2 | -65°C | 175°C | 23 K |
UPF1N100 | N Channel MOSFET | Microsemi-Corporation | Powermite_3 | - | - | - | 58 K |
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